DocumentCode :
2661874
Title :
Near-infrared Electroluminescence from Multilayered CdF2/CaF2 Quantum Heterostructure Grown on Trench-Patterned Si
Author :
Jinen, K. ; Uchida, Kazunori ; Kodaira, Shuichi ; Watanabe, Manabu ; Asada, Minoru
Author_Institution :
Dept. of Electron. & Appl. Phys., Tokyo Inst. of Tech., Kanagawa
fYear :
2006
fDate :
13-15 Sept. 2006
Firstpage :
128
Lastpage :
130
Abstract :
A CdF2/CaF2 intersubband transition light-emitting structure is fabricated on a trench-patterned Si substrate. Electroluminescence from the device was observed in the near-infrared region
Keywords :
cadmium compounds; electroluminescence; elemental semiconductors; light emitting devices; semiconductor heterojunctions; semiconductor materials; semiconductor superlattices; silicon; CdF2-CaF2; LED; Si; intersubband transition light-emitting structure; multilayered quantum heterostructure; near-infrared electroluminescence; superlattices; trench-patterned silicon(111) substrate; Annealing; Electrodes; Electroluminescence; Lattices; Light emitting diodes; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
Type :
conf
DOI :
10.1109/GROUP4.2006.1708188
Filename :
1708188
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2661874
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