Title :
In situ gas phase infrared absorption measurements during hafnium oxide atomic layer deposition
Author :
Maslar, J.E. ; Hurst, W.S. ; Burgess, D.R. ; Kimes, W.A. ; Nguyen, N.V. ; Moore, E.F.
Author_Institution :
Nat. Inst. of Stand. & Technol., College Park
Abstract :
In this work, measurements were performed in a single-wafer, warm-wall, horizontal-flow reactor. Additional design characteristics of this reactor include optical access near the wafer surface, good gas flow characteristics (facilitating reproducible high quality film growth), and an aluminum body (facilitating maintenance of a uniform wall temperature).
Keywords :
atomic layer deposition; hafnium; aluminum body; gas flow characteristics; hafnium oxide atomic layer deposition; horizontal-flow reactor; in situ gas phase infrared absorption measurements; wafer surface; Atom optics; Atomic layer deposition; Atomic measurements; Electromagnetic wave absorption; Hafnium oxide; Inductors; Optical design; Optical films; Performance evaluation; Phase measurement;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422554
