DocumentCode
2661907
Title
The semiconductor-dielectric interface from PN junction edge and the voltage dependence of leakage reverse current
Author
Obreja, Vasile V N
Author_Institution
Nat. R&D Inst. for Microtechnology (IMT-Bucuresti), Bucharest
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
For commercial silicon PN junctions, significant leakage reverse current at the junction edge has impact on the maximum permissible junction temperature and the maximum working voltage is discussed.
Keywords
electric potential; elemental semiconductors; leakage currents; p-n junctions; passivation; semiconductor-insulator boundaries; silicon; Si; electrical characteristics; junction temperature; leakage reverse current; passivation process; semiconductor-dielectric interface; silicon PN junction edge; Breakdown voltage; Dielectric devices; Educational institutions; Electric variables; Passivation; Research and development; Semiconductor devices; Semiconductor materials; Silicon devices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422555
Filename
4422555
Link To Document