Title :
Dynamic intrinsic chip ID using 32nm high-K/metal gate SOI embedded DRAM
Author :
Fainstein, Daniel ; Rosenblatt, Sami ; Cestero, Alberto ; Robson, Norman ; Kirihata, Toshiaki ; Iyer, Subramanian S.
Author_Institution :
IBM Syst. & Technol. Group, Hopewell Junction, NY, USA
Abstract :
A random intrinsic chip ID method generates a pair of 4Kb binary strings using retention fails in 32nm SOI embedded DRAM. Hardware results show ID overlap distance mean=0.58 and σ=0.76 and demonstrate 100% authentication for 346 chips. The analytical model predicts >; 99.999% unique IDs for 106 parts.
Keywords :
DRAM chips; high-k dielectric thin films; identification; silicon-on-insulator; RICID; Retention based Intrinsic Chip ID; binary string; chip identification; dynamic intrinsic chip ID; high-K-metal gate SOI embedded DRAM; random intrinsic chip ID method; size 32 nm; storage capacity 4 Kbit; Analytical models; Arrays; Authentication; Hardware; Logic gates; Metals; Random access memory; HKMG; Intrinsic ID; Security; embedded DRAM;
Conference_Titel :
VLSI Circuits (VLSIC), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0848-9
Electronic_ISBN :
978-1-4673-0845-8
DOI :
10.1109/VLSIC.2012.6243832
