DocumentCode
2661942
Title
Light Emitting Silicon Nanowires for Photonic Device Applications
Author
Guichard, A.R. ; Brongersma, M.L. ; Kamins, T. ; Sharma, S.
Author_Institution
Geballe Lab. for Adv. Mater., Stanford Univ., CA
fYear
2006
fDate
13-15 Sept. 2006
Firstpage
137
Lastpage
139
Abstract
Si nanowires grown from TiSi2 catalysts exhibit near-infrared photoluminescence (PL) from quantum-confined excitons in the Si. Temperature dependent studies highlight the differences between Si nanocrystals and nanowires, which allow for exciton diffusion
Keywords
catalysts; elemental semiconductors; excitons; light emitting devices; nanowires; photoluminescence; silicon; titanium compounds; Si; Si nanocrystal; TiSi2; TiSi2 catalyst; exciton diffusion; light emitting silicon nanowires; near-infrared photoluminescence; photonic device application; quantum-confined excitons; Annealing; Argon; Electrons; Excitons; Laboratories; Luminescence; Nanowires; Oxidation; Silicides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location
Ottawa, Ont.
Print_ISBN
1-4244-0096-1
Type
conf
DOI
10.1109/GROUP4.2006.1708191
Filename
1708191
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