DocumentCode :
2661942
Title :
Light Emitting Silicon Nanowires for Photonic Device Applications
Author :
Guichard, A.R. ; Brongersma, M.L. ; Kamins, T. ; Sharma, S.
Author_Institution :
Geballe Lab. for Adv. Mater., Stanford Univ., CA
fYear :
2006
fDate :
13-15 Sept. 2006
Firstpage :
137
Lastpage :
139
Abstract :
Si nanowires grown from TiSi2 catalysts exhibit near-infrared photoluminescence (PL) from quantum-confined excitons in the Si. Temperature dependent studies highlight the differences between Si nanocrystals and nanowires, which allow for exciton diffusion
Keywords :
catalysts; elemental semiconductors; excitons; light emitting devices; nanowires; photoluminescence; silicon; titanium compounds; Si; Si nanocrystal; TiSi2; TiSi2 catalyst; exciton diffusion; light emitting silicon nanowires; near-infrared photoluminescence; photonic device application; quantum-confined excitons; Annealing; Argon; Electrons; Excitons; Laboratories; Luminescence; Nanowires; Oxidation; Silicides; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
Type :
conf
DOI :
10.1109/GROUP4.2006.1708191
Filename :
1708191
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2661942
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