• DocumentCode
    2661942
  • Title

    Light Emitting Silicon Nanowires for Photonic Device Applications

  • Author

    Guichard, A.R. ; Brongersma, M.L. ; Kamins, T. ; Sharma, S.

  • Author_Institution
    Geballe Lab. for Adv. Mater., Stanford Univ., CA
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    137
  • Lastpage
    139
  • Abstract
    Si nanowires grown from TiSi2 catalysts exhibit near-infrared photoluminescence (PL) from quantum-confined excitons in the Si. Temperature dependent studies highlight the differences between Si nanocrystals and nanowires, which allow for exciton diffusion
  • Keywords
    catalysts; elemental semiconductors; excitons; light emitting devices; nanowires; photoluminescence; silicon; titanium compounds; Si; Si nanocrystal; TiSi2; TiSi2 catalyst; exciton diffusion; light emitting silicon nanowires; near-infrared photoluminescence; photonic device application; quantum-confined excitons; Annealing; Argon; Electrons; Excitons; Laboratories; Luminescence; Nanowires; Oxidation; Silicides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708191
  • Filename
    1708191