Title :
Characterization of the low temperature activated P+/N junction formed by implant into silicide method
Author :
Chang, Kow-Ming ; Lin, Jian-Hong ; Yang, Chih-Hsiang
Author_Institution :
Nat. Chiao-Tung Univ., Hsinchu
Abstract :
In this work, we combine the SIMS, capacitance-voltage (I-V), capacitance-voltage (C-V), and four points probe (FPP) measurements to show the P+/N junction´s characteristics and to discuss the junction formation behavior.
Keywords :
p-n junctions; probes; secondary ion mass spectroscopy; SIMS; capacitance-voltage; four points probe measurements; silicide method; Boron; Capacitance-voltage characteristics; Density measurement; Doping profiles; Electrical resistance measurement; Implants; Nickel; Silicides; Silicon; Temperature measurement;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422558
