Title :
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDs
Author :
Kompocholis, C. ; Pucker, G. ; Bellutti, P. ; Lui, A. ; Vanzetti, L. ; Bersani, M. ; Anderle, M. ; Prezioso, S. ; Gaburro, Z. ; Pavesi, L.
Author_Institution :
Microtechnol. Lab., ITC-IRST, Trento
Abstract :
We study the effect on a LED of a controlled insertion of N in Si oxide containing Si nanocrystals. Nitrogen lowers the electronic potential barrier, thus increasing the carrier injection. Electroluminescence spectroscopy suggests that both electron and hole injection can be observed
Keywords :
charge-coupled devices; electroluminescence; elemental semiconductors; light emitting diodes; nanostructured materials; silicon; Si; Si nanocrystals; Si-nc based MOS-LED; carrier injection; electroluminescence spectroscopy; electron injection; electronic potential barrier; excitation mechanism; hole injection; nitrogen; Electroluminescence; Nanocrystals; Nitrogen; Optical pumping; Optical refraction; Optical variables control; Physics; Silicon; Spectroscopy; Stimulated emission;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708192
