DocumentCode :
2661956
Title :
A fully-digital phase-locked low dropout regulator in 32nm CMOS
Author :
Raychowdhury, Arijit ; Somasekhar, Dinesh ; Tschanz, James ; De, Vivek
Author_Institution :
Circuit Res. Lab., Intel, Hillsboro, OR, USA
fYear :
2012
fDate :
13-15 June 2012
Firstpage :
148
Lastpage :
149
Abstract :
A fully-digital phase-locked low dropout regulator (LDO) has been designed in 32nm CMOS for fine-grained power delivery to multi-Vcc digital circuits. Measurements across a wide range of input voltages and currents exhibit that the LDO offers excellent load regulation and efficiency close to 97% of ideal efficiency at nominal load current conditions (ILOAD=3mA).
Keywords :
CMOS digital integrated circuits; digital phase locked loops; voltage regulators; CMOS process; LDO; current 3 mA; fully-digital phase-locked low dropout regulator; load regulation; multivoltage digital circuits; size 32 nm; CMOS integrated circuits; Clocks; Current measurement; Silicon; Voltage control; Voltage measurement; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits (VLSIC), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0848-9
Electronic_ISBN :
978-1-4673-0845-8
Type :
conf
DOI :
10.1109/VLSIC.2012.6243833
Filename :
6243833
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2661956
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