Title :
Photoluminescence Mechanism of Si Nanocrystals Embedded in SiO2 Matrix
Author :
Xiaoxin Wang ; Buwen Cheng ; Jinzhong Yu ; Qiming Wang
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
Abstract :
The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin´s model
Keywords :
elemental semiconductors; interface states; nanostructured materials; photoluminescence; silicon; silicon compounds; PL signals; Qin´s model; Si; SiO2; interface state recombination effect; photoluminescence mechanism; quantum confinement effect; silicon dioxide matrix; silicon nanocrystals; silicon rich oxide material system; Annealing; Deconvolution; Integrated optoelectronics; Interface states; Luminescence; Nanocrystals; Photoluminescence; Potential well; Radiative recombination; Silicon;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708198
