A new field-plated GaN HEMT structure with improved power and noise performance

Author

Xu, Hongtao ; Sanabria, Christopher ; Chini, Alessandro ; Wei, Yun ; Heikman, Sten ; Keller, Stacia ; Mishra, Umesh K. ; York, Robert A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

4-6 Aug. 2004

Firstpage

186

Lastpage

191

Abstract

Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, two different field-plated GaN HEMT structures were demonstrated and compared to each other. The results show that a new GaN HEMT structure improves both power and noise performance without additional processing or costs.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device noise; wide band gap semiconductors; GaN; field-plated HEMT structure; high electron mobility transistor; noise performance; power-density; Aluminum gallium nitride; Circuit noise; Fabrication; Fingers; Frequency; Gallium nitride; HEMTs; Passivation; Protection; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

981-256-196-X

Type

conf

DOI

10.1109/LECHPD.2004.1549692

Filename

1549692

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662103