DocumentCode
2662114
Title
Noise characteristics of field-plated GaN HEMTs
Author
Wu, Y.F. ; Moore, M. ; Wisleder, T. ; Chavarkar, P.M. ; Parikh, P. ; Saxler, A.
Author_Institution
Cree Santa Barbara Technol. Center, Goleta, CA, USA
fYear
2004
fDate
4-6 Aug. 2004
Firstpage
192
Lastpage
194
Abstract
Investigation into field-plated GaN HEMTs has revealed that, although addition of the field plate reduces cutoff frequencies, noise figure actually improves. An analysis is presented to explain this phenomenon, which is related to the trade-off between gate-drain capacitance and gate conductance.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device noise; wide band gap semiconductors; GaN; cutoff frequencies; field-plated HEMT; gate conductance; gate-drain capacitance; high electron mobility transistor; noise characteristics; noise figure; Capacitance; Circuits; Cutoff frequency; Fabrication; Gallium nitride; HEMTs; Low-frequency noise; MODFETs; Noise figure; Noise measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN
981-256-196-X
Type
conf
DOI
10.1109/LECHPD.2004.1549693
Filename
1549693
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