DocumentCode :
2662127
Title :
Triggered Electroluminescence from a Strained Si1-XGeX/Si Single Quantum Well
Author :
Yasuhara, N. ; Fukatsu, S.
Author_Institution :
Graduate Sch. of Arts & Sci., Tokyo Univ.
fYear :
2006
fDate :
13-15 Sept. 2006
Firstpage :
167
Lastpage :
169
Abstract :
Triggered electroluminescence is demonstrated in an electrically biased strained Si1-xGex/Si single quantum well where otherwise spatially separated electron-hole pairs created through impact ionization are made to recombine upon removing the bias voltage, paving a way towards on-demand Si-based single photon emitters and optical memory application
Keywords :
electroluminescence; electron-hole recombination; elemental semiconductors; impact ionisation; semiconductor quantum wells; silicon; silicon compounds; Si1-xGex-Si; bias voltage; electrically biased quantum well; electron-hole recombination; impact ionization; optical memory application; silicon-based single photon emitters; spatially separated electron-hole pairs; strained single quantum well; triggered electroluminescence; Electroluminescence; Electrons; Impact ionization; Light emitting diodes; Luminescence; Photonics; Quantum computing; Radiative recombination; Spontaneous emission; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
Type :
conf
DOI :
10.1109/GROUP4.2006.1708201
Filename :
1708201
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2662127
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