A SiGe-bipolar down-conversion mixer for a UMTS zero-IF receiver

Author

Pretl, Harald ; Schelmbauer, Wemer ; Adler, Bemd ; Maurer, Linus ; Fenk, Josef ; Weigel, Robert

Author_Institution

Inst. for Commun. & Inf. Eng., Linz Univ., Austria

fYear

2000

fDate

2000

Firstpage

40

Lastpage

43

Abstract

A down-conversion I/Q-mixer for a W-CDMA zero-IF receiver implemented in a 75 GHz f_t bipolar SiGe technology is reported. Including I/Q-generation and biasing, it consumes a supply current of 18 mA from a 2.7 V supply. A voltage gain of 10.2 dB and an IIP3 of 8 dBm have been achieved. Using frequency division to derive the I- and Q-phases for the local oscillator signals results in LO-RF leakage lower than -68 dBm and an IIP2 better than 56 dBm. DC offsets at the I and Q mixer baseband outputs are typically below 5 mV

Keywords

Ge-Si alloys; MMIC frequency convertors; MMIC mixers; bipolar MMIC; cellular radio; code division multiple access; electric current; integrated circuit measurement; radio receivers; semiconductor materials; 10.2 dB; 18 mA; 2.7 V; 75 GHz; DC offsets; I mixer baseband output; I-phase; I/Q-generation; LO-RF leakage; Q mixer baseband output; Q-phase; SiGe; SiGe-bipolar down-conversion mixer; UMTS zero-IF receiver; W-CDMA zero-IF receiver; biasing; bipolar SiGe technology; down-conversion I/Q-mixer; frequency division; local oscillator signals; supply current; voltage gain; 3G mobile communication; Baseband; Current supplies; Frequency conversion; Gain; Germanium silicon alloys; Local oscillators; Multiaccess communication; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886170

Filename

886170