Title :
Temperature-Dependent Analysis of Ge-on-SOI Photodetectors and Receivers
Author :
Koester, S.J. ; Schares, L. ; Schow, C.L. ; Dehlinger, G. ; John, R.A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
Abstract :
The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85degC despite a 10x increase in dark current compared to room temperature
Keywords :
elemental semiconductors; germanium; integrated optoelectronics; optical receivers; photodetectors; photodiodes; silicon-on-insulator; thermo-optical effects; 10 Gbit/s; 85 C; Ge-Si-SiO2; Ge-on-SOI photodetectors; dark current; error-free receiver operation; photodiodes; receiver performance; temperature-dependent analysis; Bandwidth; Dark current; Detectors; Error-free operation; Optical receivers; PIN photodiodes; Photodetectors; Photonic band gap; Temperature dependence; Temperature measurement;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708205
