High linearity GaN HEMT power amplifier with pre-linearization gate diode

Author

Xie, Shouxuan ; Paidi, Vamsi ; Heikman, Sten ; Shen, Likun ; Chini, Alessandro ; Mishra, Umesh K. ; Rodwell, Mark J.W. ; Long, Stephen I.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

4-6 Aug. 2004

Firstpage

223

Lastpage

228

Abstract

A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C_gs of the GaN HEMT device. Another single-ended class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD₃) performance over the one without the diode over the useful power range in two-tone measurement.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; intermodulation distortion; millimetre wave diodes; wide band gap semiconductors; AlGaN-GaN; HEMT power amplifier; MMIC RF power amplifier; intermodulation distortion; nonlinear input capacitance; pre-linearization gate diode; single-ended class B power amplifier; Aluminum gallium nitride; Capacitance; Diodes; Gallium nitride; HEMTs; High power amplifiers; Linearity; MMICs; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

981-256-196-X

Type

conf

DOI

10.1109/LECHPD.2004.1549698

Filename

1549698