Improved modeling of output conductance and cut-off frequency of bipolar transistors

Author

Paasschens, J.C.J. ; Kloosterman, W.J. ; Havens, R.J. ; de Graaff, H.C.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

2000

fDate

2000

Firstpage

62

Lastpage

65

Abstract

The collector epilayer is a crucial element in the behaviour of modern bipolar transistors. Compact models for its description, like the Kull model, are also therefore of crucial importance. We give a Mextram-based improvement to these models for quasi-saturation, and show that the output conductance and the cut-off frequency are much smoother. Apart from ohmic quasi-saturation, we also include velocity saturation, which also leads to quasi-saturation (Kirk effect)

Keywords

bipolar transistors; electric admittance; semiconductor device measurement; semiconductor device models; semiconductor epitaxial layers; Kirk effect; Kull model; Mextram-based model improvement; bipolar transistors; collector epilayer; cut-off frequency; modeling; ohmic quasi-saturation; output conductance; quasi-saturation; velocity saturation; Bipolar transistors; Charge carrier processes; Cutoff frequency; Doping; Kirk field collapse effect; Laboratories; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886174

Filename

886174