Title :
SPICE model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier
Author :
Islam, Syed S. ; Anwar, A.F.M.
Author_Institution :
Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
SPICE model parameters are extracted from reported experimental data. The model is implemented in the Cadence Affirma Analog Circuit Design Environment and Spectre simulator is used to simulate class-E power amplifier and ring voltage controlled oscillator (VCO) circuits. The availability of the SPICE model for GaN HEMTs ensures optimization of analog/RF circuits before an expensive cut-and-try method is employed.
Keywords :
III-V semiconductors; SPICE; aluminium compounds; circuit simulation; gallium compounds; high electron mobility transistors; power amplifiers; semiconductor device models; voltage-controlled oscillators; wide band gap semiconductors; AlGaN-GaN; Cadence Affirma Analog Circuit Design Environment; SPICE model; Spectre simulator; class-E power amplifier; high electron mobility transistor; ring voltage controlled oscillator; Aluminum gallium nitride; Analog circuits; Circuit simulation; Data mining; Gallium nitride; HEMTs; MODFETs; Power amplifiers; SPICE; Voltage-controlled oscillators;
Conference_Titel :
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
981-256-196-X
DOI :
10.1109/LECHPD.2004.1549699
