SPICE model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier

Author

Islam, Syed S. ; Anwar, A.F.M.

Author_Institution

Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA

fYear

2004

fDate

4-6 Aug. 2004

Firstpage

229

Lastpage

235

Abstract

SPICE model parameters are extracted from reported experimental data. The model is implemented in the Cadence Affirma Analog Circuit Design Environment and Spectre simulator is used to simulate class-E power amplifier and ring voltage controlled oscillator (VCO) circuits. The availability of the SPICE model for GaN HEMTs ensures optimization of analog/RF circuits before an expensive cut-and-try method is employed.

Keywords

III-V semiconductors; SPICE; aluminium compounds; circuit simulation; gallium compounds; high electron mobility transistors; power amplifiers; semiconductor device models; voltage-controlled oscillators; wide band gap semiconductors; AlGaN-GaN; Cadence Affirma Analog Circuit Design Environment; SPICE model; Spectre simulator; class-E power amplifier; high electron mobility transistor; ring voltage controlled oscillator; Aluminum gallium nitride; Analog circuits; Circuit simulation; Data mining; Gallium nitride; HEMTs; MODFETs; Power amplifiers; SPICE; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

981-256-196-X

Type

conf

DOI

10.1109/LECHPD.2004.1549699

Filename

1549699

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662202