• DocumentCode
    2662208
  • Title

    Heterogeneous Integration of III-V Photodetectors and Laser Diodes on Silicon-on-Insulator Waveguide Circuits

  • Author

    Roelkens, G. ; Brouckaert, J. ; Verstuyft, S. ; Schrauwen, J. ; Van Thourhout, D. ; Baets, R.

  • Author_Institution
    Dept. of Inf. Technol., Ghent Univ.
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    188
  • Lastpage
    190
  • Abstract
    InP/InGaAsP photodetectors and lasers were integrated on top of ultra-compact silicon-on-insulator waveguide circuits using benzocyclobutene adhesive bonding. Light is coupled between III-V device and SOI waveguide using an inverted taper
  • Keywords
    III-V semiconductors; adhesive bonding; arsenic compounds; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated circuit bonding; integrated optics; integrated optoelectronics; optical couplers; optical waveguides; photodetectors; semiconductor lasers; silicon-on-insulator; III-V photodetectors; InP-InGaAsP; Si-SiO2; benzocyclobutene adhesive bonding; heterogeneous integration; inverted taper; laser diodes; light coupling scheme; silicon-on-insulator waveguide circuits; Coupling circuits; Diode lasers; III-V semiconductor materials; Indium phosphide; Optical coupling; Optical waveguides; Photodetectors; Polymers; Silicon on insulator technology; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708208
  • Filename
    1708208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662208