DocumentCode :
2662228
Title :
11 GHz SiGe circuits for ultra wideband radar
Author :
Rossberg, Michael ; Sachs, J. ; Rauschenbach, P. ; Peyerl, P. ; Presse, K. ; Winkler, W. ; Knoll, D.
Author_Institution :
Ilmenau Tech. Univ., Germany
fYear :
2000
fDate :
2000
Firstpage :
70
Lastpage :
73
Abstract :
Transmitter and receiver circuits operating at 11 GHz system clock rate are described. These circuits, fabricated in a 0.8 μm SiGe-HBT technology, are the key elements of a radar head using a new ultra wideband principle
Keywords :
Ge-Si alloys; bipolar MMIC; integrated circuit measurement; radar receivers; radar transmitters; semiconductor materials; 0.8 micron; 11 GHz; SiGe; SiGe circuits; SiGe-HBT technology; radar head elements; receiver circuits; system clock rate; transmitter circuits; ultra wideband principle; ultra wideband radar; Circuits; Clocks; Germanium silicon alloys; Head; Heterojunction bipolar transistors; Radar imaging; Radio frequency; Shift registers; Silicon germanium; Ultra wideband radar;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-6384-1
Type :
conf
DOI :
10.1109/BIPOL.2000.886176
Filename :
886176
Link To Document :
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