Title :
Trench termination technique with vertical JTE for 6 kV devices
Author :
Dragomirescu, Daniela ; Charitat, Georges
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
A new termination technique using deep trenches and vertical JTE (junction termination extension) is reported. The device breakdown voltage is increased to almost the ideal value and the silicon area consumption is much lower than other solutions
Keywords :
elemental semiconductors; high-voltage techniques; isolation technology; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; silicon; 6 kV; deep trenches; device breakdown voltage; power semiconductor devices; silicon area consumption; termination technique; trench termination technique; vertical JTE; vertical junction termination extension; Availability; Avalanche breakdown; Breakdown voltage; Etching; Low voltage; Passivation; Protection; Silicon; Space charge; Temperature;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886179
