Title :
Simulation study on breakdown behavior of field-plate SiC MESFETs
Author :
Cha, Ho-Young ; Choi, Y.C. ; Eastman, Lester F. ; Spencer, Michael G.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The effects of field-plate structures on SiC MESFETs were investigated using two-dimensional simulations. The simulation results without a field-plate were in good agreement with the characteristics of fabricated SiC MESFETs. The breakdown voltage was increased by 80 % when the optimum field-plate was applied to the device with a 0.5 μm long gate and a 1 μm spacing between gate and drain; a breakdown voltage of 240-250 V was obtained from a 0.35 μm field-plate, while 140 V was obtained without a field-plate.
Keywords :
power MESFET; semiconductor device breakdown; semiconductor device models; silicon compounds; wide band gap semiconductors; 0.35 micron; 0.5 micron; 1 micron; 140 V; 240 to 250 V; 2D simulations; SiC; breakdown behavior; breakdown voltage; field-plate MESFET; field-plate structures; Breakdown voltage; Computational modeling; Electric breakdown; Gallium nitride; HEMTs; MESFETs; Semiconductor device breakdown; Silicon carbide; Solid modeling; Thermal conductivity;
Conference_Titel :
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
981-256-196-X
DOI :
10.1109/LECHPD.2004.1549704
