Title :
Incorporation of a Photonic Layer at the Metallizations Levels of a CMOS Circuit
Author :
Fedeli, J.M. ; Migette, M. ; Cioccio, L. ; El Melhaoui, L. ; Orobtchouk, R. ; Seassal, C. ; Rojo-Romeo, P. ; Mandorlo, F. ; Marris-Morini, D. ; Vivien, L.
Author_Institution :
LETI, CEA-DRT, Grenoble
Abstract :
The integration of a photonic layer on a CMOS circuit can be done either by wafer bonding of an SOI photonic circuit or by low temperature fabrication of a photonic layer at the metallization levels
Keywords :
CMOS integrated circuits; integrated circuit metallisation; integrated optoelectronics; optical fabrication; silicon-on-insulator; wafer bonding; CMOS circuit; SOI photonic circuit; Si-SiO2; low temperature fabrication; metallization levels; photonic layer; wafer bonding; Metallization; Optical device fabrication; Optical interconnections; Optical mixing; Optical refraction; Optical waveguides; Photonic integrated circuits; Silicon; Temperature; Wafer bonding;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708212
