DocumentCode :
2662280
Title :
A novel LDMOS structure with high negative voltage capability for reverse battery protection in automotive IC´s
Author :
Macary, V. ; Sicard, T. ; Petrutiu, R.
Author_Institution :
SMARTMOS Technol. Center, Motorola SPS, Mesa, AZ, USA
fYear :
2000
fDate :
2000
Firstpage :
90
Lastpage :
93
Abstract :
A novel LDMOS device is presented, offering high reverse VDS compared to the normal body-diode limit (-0.6 V). This device is well suited for applications requiring reverse battery protection
Keywords :
MOS integrated circuits; automotive electronics; integrated circuit reliability; power MOSFET; power integrated circuits; power supplies to apparatus; protection; semiconductor device testing; -0.6 V; LDMOS device; LDMOS structure; automotive ICs; body-diode limit; negative voltage capability; reverse battery protection; reverse battery protection applications; reverse drain-source voltage; Automotive applications; Batteries; Bridge circuits; Diodes; MOSFET circuits; Power MOSFET; Power integrated circuits; Protection; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-6384-1
Type :
conf
DOI :
10.1109/BIPOL.2000.886180
Filename :
886180
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2662280
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