• DocumentCode
    2662280
  • Title

    A novel LDMOS structure with high negative voltage capability for reverse battery protection in automotive IC´s

  • Author

    Macary, V. ; Sicard, T. ; Petrutiu, R.

  • Author_Institution
    SMARTMOS Technol. Center, Motorola SPS, Mesa, AZ, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    90
  • Lastpage
    93
  • Abstract
    A novel LDMOS device is presented, offering high reverse VDS compared to the normal body-diode limit (-0.6 V). This device is well suited for applications requiring reverse battery protection
  • Keywords
    MOS integrated circuits; automotive electronics; integrated circuit reliability; power MOSFET; power integrated circuits; power supplies to apparatus; protection; semiconductor device testing; -0.6 V; LDMOS device; LDMOS structure; automotive ICs; body-diode limit; negative voltage capability; reverse battery protection; reverse battery protection applications; reverse drain-source voltage; Automotive applications; Batteries; Bridge circuits; Diodes; MOSFET circuits; Power MOSFET; Power integrated circuits; Protection; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-6384-1
  • Type

    conf

  • DOI
    10.1109/BIPOL.2000.886180
  • Filename
    886180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662280