DocumentCode
2662299
Title
Analytical model for non-self aligned buried p-layer SiC MESFET
Author
Gupta, R.S. ; Aggarwal, Sandeep Kumar ; Gupta, Ritesh ; Gupta, Mridula ; Haldar, Subhasis
Author_Institution
Dept. of Electron. Sci., Delhi Univ., New Delhi, India
fYear
2004
fDate
4-6 Aug. 2004
Firstpage
273
Lastpage
281
Abstract
A new analytical model for saturation region is proposed for buried p-layer 4H-SiC MESFET considering the effect of B.P. layer. This model provides the static characteristics, small signal parameters and is also extended to predict capacitance-voltage characteristics of the device. The results so obtained are in excellent agreement with experimental data confirming the validity of this model.
Keywords
Schottky gate field effect transistors; buried layers; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; analytical model; capacitance-voltage characteristics; nonself aligned buried p-layer MESFET; saturation region; Analytical models; Gallium arsenide; Laboratories; MESFETs; Semiconductor device doping; Semiconductor devices; Silicon carbide; Substrates; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN
981-256-196-X
Type
conf
DOI
10.1109/LECHPD.2004.1549706
Filename
1549706
Link To Document