A Numerically Efficient Formulation for Time-Domain Electromagnetic-Semiconductor Cosimulation for Fast-Transient Systems

Author

Quan Chen ; Schoenmaker, W. ; GuanHua Chen ; Lijun Jiang ; Ngai Wong

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Pokfulam, China

Volume

32

Issue

5

fYear

2013

fDate

May-13

Firstpage

802

Lastpage

806

Abstract

We report recent progress in developing a numerically efficient formulation for electromagnetic-technology computer-aided design cosimulation for fast-transient computations. The difficulties underlying the currently existing transient formulation stemming from the vector potential-scalar potential (A-V) framework are analyzed. A time-domain electric field-scalar potential (E-V) framework is then developed via equation and variable transformations. This results in better-conditioned systems that are friendly to iterative solutions at fast switching times. Numerical examples show that the proposed E-V solver renders a useful tool for addressing multidomain simulation.

Keywords

circuit CAD; circuit simulation; electric fields; integrated circuit design; iterative methods; time-domain analysis; transient analysis; electromagnetic-technology computer-aided design cosimulation; fast switching time; fast-transient computation; fast-transient system; iterative solution; multidomain simulation; numerically efficient formulation; time-domain electric field-scalar potential framework; time-domain electromagnetic-semiconductor cosimulation; variable transformation; vector potential-scalar potential framework; Equations; Mathematical model; Metals; Substrates; Through-silicon vias; Time-domain analysis; Transient analysis; Cosimulation; E-V framework; TCAD; electromagnetics; high frequency; transient simulation;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.2012.2232709

Filename

6504550