Title :
A Numerically Efficient Formulation for Time-Domain Electromagnetic-Semiconductor Cosimulation for Fast-Transient Systems
Author :
Quan Chen ; Schoenmaker, W. ; GuanHua Chen ; Lijun Jiang ; Ngai Wong
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Pokfulam, China
Abstract :
We report recent progress in developing a numerically efficient formulation for electromagnetic-technology computer-aided design cosimulation for fast-transient computations. The difficulties underlying the currently existing transient formulation stemming from the vector potential-scalar potential (A-V) framework are analyzed. A time-domain electric field-scalar potential (E-V) framework is then developed via equation and variable transformations. This results in better-conditioned systems that are friendly to iterative solutions at fast switching times. Numerical examples show that the proposed E-V solver renders a useful tool for addressing multidomain simulation.
Keywords :
circuit CAD; circuit simulation; electric fields; integrated circuit design; iterative methods; time-domain analysis; transient analysis; electromagnetic-technology computer-aided design cosimulation; fast switching time; fast-transient computation; fast-transient system; iterative solution; multidomain simulation; numerically efficient formulation; time-domain electric field-scalar potential framework; time-domain electromagnetic-semiconductor cosimulation; variable transformation; vector potential-scalar potential framework; Equations; Mathematical model; Metals; Substrates; Through-silicon vias; Time-domain analysis; Transient analysis; Cosimulation; E-V framework; TCAD; electromagnetics; high frequency; transient simulation;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2012.2232709
