DocumentCode :
2662324
Title :
High Performance Quantum-Dot Lasers on Silicon - Challenges and Future Prospects
Author :
Bhattacharya, P. ; Mi, Z. ; Yang, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
fYear :
2006
fDate :
13-15 Sept. 2006
Firstpage :
206
Lastpage :
208
Abstract :
We report the growth and characteristics of high performance self-organized InGaAs/GaAs quantum dot lasers on silicon. The devices exhibit low threshold current (Jth~900 A/cm2), high output power (~150 mW), and large characteristic temperature (T0=244 K)
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; laser beams; quantum dot lasers; semiconductor quantum dots; silicon; 244 K; 293 to 298 K; InGaAs-GaAs; characteristic temperature; high performance quantum dot laser characteristics; laser output power; self-organized InGaAs/GaAs quantum dot laser; silicon; threshold current; Buffer layers; Capacitive sensors; Filters; Gallium arsenide; Indium gallium arsenide; Power generation; Quantum dot lasers; Quantum well lasers; Silicon; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
Type :
conf
DOI :
10.1109/GROUP4.2006.1708214
Filename :
1708214
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2662324
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