Title :
A 0.15 μm/0.6 dB-NFmin RF BiCMOS technology using cobalt silicide ground shields
Author :
Fujii, Hiroki ; Suzuki, Hisamitsu ; Yoshida, Hiroshi ; Yamazaki, Tohru
Author_Institution :
ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan
Abstract :
This paper describes a newly developed cobalt silicide ground shield without any additional process step for a 0.15 μm RF BiCMOS. By using this ground shield, low NFmin values of 0.6 dB/0.3 dB at 2 GHz with bipolar/nMOS transistors were simultaneously achieved and NF50 of an on-chip spiral inductor was remarkably improved at high frequency
Keywords :
BiCMOS integrated circuits; MOSFET; UHF bipolar transistors; UHF field effect transistors; UHF integrated circuits; cobalt compounds; integrated circuit measurement; integrated circuit metallisation; integrated circuit noise; 0.15 micron; 0.3 dB; 0.6 dB; 2 GHz; RF BiCMOS; RF BiCMOS technology; bipolar transistors; cobalt silicide ground shields; ground shield; minimum noise figure; nMOS transistors; on-chip spiral inductor; BiCMOS integrated circuits; Cobalt; Inductors; Noise figure; Parasitic capacitance; Radio frequency; Silicides; Spirals; Substrates; Thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886182
