DocumentCode
2662348
Title
Monolithic, Bufferless AlGaSb Emitters on Si based on Interfacial Misfit Arrays
Author
Huffaker, D.
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM
fYear
2006
fDate
13-15 Sept. 2006
Firstpage
211
Lastpage
212
Abstract
In this paper a monolithic, bufferless approach to III-V devices on Si substrates based on a self-assembled array of 90deg interfacial misfits (IMF) is discussed. This growth method, based on III-Sb, is fundamentally different from previously reported approaches since the strain energy due to the 13% lattice mismatch is fully and immediately relieved at the III-V interface rather than tetragonal distortion followed by defect formation as in III-As on Si
Keywords
III-V semiconductors; aluminium compounds; dislocations; elemental semiconductors; gallium compounds; monolithic integrated circuits; self-assembly; silicon; AlGaSb; III-V devices; Si; bufferless AlGaSb emitters; defect formation; interfacial misfit arrays; lattice mismatch; monolithic emitters; self-assembled array; silicon substrates; strain energy; tetragonal distortion; Assembly; Capacitive sensors; Circuits; Gallium arsenide; III-V semiconductor materials; Lattices; Optimization methods; Thermal expansion; Vertical cavity surface emitting lasers; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location
Ottawa, Ont.
Print_ISBN
1-4244-0096-1
Type
conf
DOI
10.1109/GROUP4.2006.1708216
Filename
1708216
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