Title :
Monolithic, Bufferless AlGaSb Emitters on Si based on Interfacial Misfit Arrays
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM
Abstract :
In this paper a monolithic, bufferless approach to III-V devices on Si substrates based on a self-assembled array of 90deg interfacial misfits (IMF) is discussed. This growth method, based on III-Sb, is fundamentally different from previously reported approaches since the strain energy due to the 13% lattice mismatch is fully and immediately relieved at the III-V interface rather than tetragonal distortion followed by defect formation as in III-As on Si
Keywords :
III-V semiconductors; aluminium compounds; dislocations; elemental semiconductors; gallium compounds; monolithic integrated circuits; self-assembly; silicon; AlGaSb; III-V devices; Si; bufferless AlGaSb emitters; defect formation; interfacial misfit arrays; lattice mismatch; monolithic emitters; self-assembled array; silicon substrates; strain energy; tetragonal distortion; Assembly; Capacitive sensors; Circuits; Gallium arsenide; III-V semiconductor materials; Lattices; Optimization methods; Thermal expansion; Vertical cavity surface emitting lasers; Wafer bonding;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708216
