A low-cost modular SiGe BiCMOS technology and analog passives for high-performance RF and wide-band applications

Author

Tang, R. ; Leung, C. ; Nguyen, D. ; Hsu, T. ; Fritzinger, L. ; Molloy, S. ; Esry, T. ; Ivanov, T. ; Chu, J. ; Carroll, M. ; Huang, J. ; Moller, W. ; Campbell, T. ; Cochran, W. ; King, C. ; Frei, M. ; Mastrapasqua, M. ; Ng, K. ; Chen, C. ; Johnson, R. ; Pu

Author_Institution

AT&T Bell Labs., Orlando, FL, USA

fYear

2000

fDate

2000

Firstpage

102

Lastpage

105

Abstract

We present a low-cost 0.25 μm SiGe BiCMOS technology that is being manufactured in an 8-inch production line. The technology includes modules for super-self-aligned (SSA) SiGe transistors, poly resistors, metal-oxide-metal (MOM) capacitors and thick-metal inductors added to a CMOS core process without any change to the CMOS process. With the independently developed modules and a high-energy implanted collector buried layer, SiGe bipolar devices with a maximum f_T of 72 GHz and f_max of 116 GHz, and thick metal inductors with Q⩾15 have been produced. Using this technology, IC chips fabricated have demonstrated essential optical network interface functions with 4:1 MUX and 1:4 DEMUX circuits operated at 10 Gb/s, and limiting amplifiers performing at 20 Gb/s

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIM devices; MMIC; MMIC amplifiers; SONET; capacitors; demultiplexing equipment; inductors; mobile radio; modules; multiplexing equipment; optical communication equipment; resistors; semiconductor materials; 0.25 micron; 10 Gbit/s; 116 GHz; 20 Gbit/s; 72 GHz; CMOS core process; CMOS process; DEMUX circuits; IC chips; MOM capacitors; MUX circuits; RF applications; SONET; SSA SiGe transistors; SiGe; SiGe BiCMOS technology; SiGe bipolar devices; analog passives; high-energy implanted collector buried layer; limiting amplifiers; maximum cut-off frequency; maximum operating frequency; metal-oxide-metal capacitors; modular SiGe BiCMOS technology; optical network interface functions; poly resistors; production line; super-self-aligned SiGe transistors; thick metal inductors; thick-metal inductors; wide-band applications; wireless communications; BiCMOS integrated circuits; CMOS process; CMOS technology; Germanium silicon alloys; Inductors; Manufacturing; Message-oriented middleware; Production; Resistors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886183

Filename

886183