DocumentCode
2662381
Title
A 0.35 μm SiGe BiCMOS process featuring a 80 GHz fmax HBT and integrated high-Q RF passive components
Author
Decoutere, S. ; Vleugels, F. ; Kuhn, R. ; Loo, R. ; Caymax, M. ; Jenei, S. ; Croon, J. ; Van Huylenbroeck, S. ; Da Rold, M. ; Rosseel, E. ; Chevalier, P. ; Coppens, P.
Author_Institution
IMEC, Leuven, Belgium
fYear
2000
fDate
2000
Firstpage
106
Lastpage
109
Abstract
A SiGe HBT, fabricated by means of selective epitaxy, and high-Q RF passive components have been integrated into a 0.35 μm BiCMOS process. The HBT features an fT of 50 GHz and fmax of 80 GHz at VBC=2 V. The npn transistors are integrated in a 0.35 μm CMOS process with poly resistors, MIM capacitors and thick metal 4 on chip spiral inductors
Keywords
BiCMOS integrated circuits; Ge-Si alloys; MMIC; Q-factor; capacitors; heterojunction bipolar transistors; inductors; integrated circuit technology; microwave bipolar transistors; resistors; semiconductor materials; 0.35 micron; 2 V; 50 GHz; 80 GHz; BiCMOS process integration; CMOS process; HBT; MIM capacitors; SiGe; SiGe BiCMOS process; SiGe HBT; cut-off frequency; high-Q RF passive components; integrated high-Q RF passive components; maximum operating frequency; npn transistors; on chip spiral inductors; poly resistors; selective epitaxy; BiCMOS integrated circuits; CMOS process; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; MIM capacitors; Radio frequency; Resistors; Silicon germanium; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-6384-1
Type
conf
DOI
10.1109/BIPOL.2000.886184
Filename
886184
Link To Document