DocumentCode :
2662387
Title :
Enhancement of Fowler-Nordheim Tunneling Based Light Emission from metal-SiOx-Si MOSLED
Author :
Gong-Ru Lin ; Chun-Jung Lin
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei
fYear :
2006
fDate :
13-15 Sept. 2006
Firstpage :
219
Lastpage :
221
Abstract :
PECVD grown nanocrystallite Si structure at SiOx/Si interface has been demonstrated to show its capability in enhancing the surface roughness and the Fowler-Nordheim tunneling based carrier injection for improved light emission from a metal-SiOx-Si MOSLED
Keywords :
light emitting diodes; metal-insulator boundaries; nanostructured materials; plasma CVD; silicon compounds; surface roughness; Fowler-Nordheim tunneling; PECVD; SiOx-Si; SiOx-Si interface; carrier injection; light emission; metal-SiOx-Si MOSLED; nanocrystallite Si structure; surface roughness; Conductivity; Indium tin oxide; Lattices; Nanocrystals; Nanostructures; Plasma temperature; Rough surfaces; Substrates; Surface roughness; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
Type :
conf
DOI :
10.1109/GROUP4.2006.1708219
Filename :
1708219
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2662387
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