DocumentCode :
2662421
Title :
A cost-effective 0.25 μm Leff BiCMOS technology featuring graded-channel CMOS (GCMOS) and a quasi-self-aligned (QSA) NPN for RF wireless applications
Author :
Chai, Francis K. ; Kyono, Carl ; Ilderem, Vida ; Kaneshiro, Mike ; Zupac, Dragan ; Bigelow, Sharanda ; Ramiah, Chandra ; Dahl, Phil ; Braithwaite, Rohan ; Morgan, Dave ; Hildreth, Scott ; Grynkewich, Greg
Author_Institution :
Digital DNA Lab., Motorola Inc., Mesa, AZ, USA
fYear :
2000
fDate :
2000
Firstpage :
110
Lastpage :
113
Abstract :
A cost-effective 0.25 μm Leff graded-channel BiCMOS technology is reported. GCMOS devices offer superior transconductance and short-channel effects to transistors with conventional laterally uniform channel doping. A complete suite of active and passive devices is offered
Keywords :
BiCMOS integrated circuits; MMIC; MOSFET; bipolar transistors; cellular radio; cordless telephone systems; doping profiles; integrated circuit design; integrated circuit measurement; paging communication; 0.25 micron; BiCMOS technology; GCMOS; GCMOS devices; QSA NPN; RF wireless applications; active devices; cellular systems; cordless phones; cost-effectiveness; effective channel length; graded-channel BiCMOS technology; graded-channel CMOS; laterally uniform channel doping; paging; passive devices; quasi-self-aligned NPN; short-channel effects; transconductance; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Capacitors; Doping; Implants; Isolation technology; MOSFETs; Radio frequency; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-6384-1
Type :
conf
DOI :
10.1109/BIPOL.2000.886185
Filename :
886185
Link To Document :
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