• DocumentCode
    2662422
  • Title

    Dielectric Matrix Influence on the Photoluminescence Properties of Silicon Nanocrystals

  • Author

    Ferraioli, L. ; Cazzanelli, M. ; Daldosso, N. ; Mulloni, V. ; Belluti, P. ; Yerci, S. ; Turan, R. ; Mikhaylov, A.N. ; Tetelbaum, D.I. ; Pavesi, L.

  • Author_Institution
    Dept. di Fisica, Trento Univ.
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    225
  • Lastpage
    227
  • Abstract
    Photoluminescence properties of silicon nanocrystals embedded in five different oxide matrices are analyzed. Samples are silicon rich oxide and oxynitride produced by PECVD and ion implantation and crystalline and amorphous aluminum oxide implanted with silicon
  • Keywords
    aluminium compounds; ion implantation; nanostructured materials; photoluminescence; plasma CVD; Al2O3:Si; PECVD; SiO; amorphous aluminum oxide; crystalline aluminum oxide; dielectric matrix; ion implantation; oxynitride; photoluminescence properties; silicon nanocrystals; silicon rich oxide; Aluminum oxide; Annealing; Crystallization; Dielectrics; Implants; Luminescence; Nanocrystals; Nitrogen; Photoluminescence; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708221
  • Filename
    1708221
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662422