DocumentCode :
2662422
Title :
Dielectric Matrix Influence on the Photoluminescence Properties of Silicon Nanocrystals
Author :
Ferraioli, L. ; Cazzanelli, M. ; Daldosso, N. ; Mulloni, V. ; Belluti, P. ; Yerci, S. ; Turan, R. ; Mikhaylov, A.N. ; Tetelbaum, D.I. ; Pavesi, L.
Author_Institution :
Dept. di Fisica, Trento Univ.
fYear :
2006
fDate :
13-15 Sept. 2006
Firstpage :
225
Lastpage :
227
Abstract :
Photoluminescence properties of silicon nanocrystals embedded in five different oxide matrices are analyzed. Samples are silicon rich oxide and oxynitride produced by PECVD and ion implantation and crystalline and amorphous aluminum oxide implanted with silicon
Keywords :
aluminium compounds; ion implantation; nanostructured materials; photoluminescence; plasma CVD; Al2O3:Si; PECVD; SiO; amorphous aluminum oxide; crystalline aluminum oxide; dielectric matrix; ion implantation; oxynitride; photoluminescence properties; silicon nanocrystals; silicon rich oxide; Aluminum oxide; Annealing; Crystallization; Dielectrics; Implants; Luminescence; Nanocrystals; Nitrogen; Photoluminescence; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
Type :
conf
DOI :
10.1109/GROUP4.2006.1708221
Filename :
1708221
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2662422
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