Title :
Reduction of neutral base recombination in narrow band-gap SiGeC base heterojunction bipolar transistors
Author :
Takagi, T. ; Yuki, K. ; Toyoda, K. ; Kanzawa, Y. ; Katayama, K. ; Nozawa, K. ; Saitoh, T. ; Kubo, M.
Author_Institution :
Adv. Technol. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
Narrow band-gap SiGeC base HBTs were fabricated by Si compatible processing. By introducing 0.3% carbon into the SiGe layers, lattice strain was decreased and neutral base recombination localized at the collector-base heterojunction was significantly reduced
Keywords :
Ge-Si alloys; carbon compounds; electron-hole recombination; heterojunction bipolar transistors; narrow band gap semiconductors; semiconductor device measurement; Si compatible processing; SiGe layers; SiGeC; carbon content; collector-base heterojunction; lattice strain; localized neutral base recombination; narrow band-gap SiGeC base HBTs; narrow band-gap SiGeC base heterojunction bipolar transistors; neutral base recombination reduction; Capacitive sensors; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Photonic band gap; Silicon alloys; Silicon germanium; Substrates; Thermal stability;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886186
