Title :
Reduction of UHF power transistor distortion with a non-uniform collector doping profile
Author :
van Noort, W.D. ; Jos, H.F.F. ; Vreede, L.C.N. ; Nanver, Lis K. ; Slotboom, J.W.
Author_Institution :
Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands
Abstract :
An arsenic spike is epitaxially grown in the lightly-doped collector of a UHF power transistor to reduce collector-base capacitance Ccb bias dependence and improve the trade-off linearity and breakdown/ruggedness. This is demonstrated experimentally and by mixed mode MDS/MAIDS simulations
Keywords :
UHF bipolar transistors; chemical vapour deposition; doping profiles; intermodulation distortion; power bipolar transistors; semiconductor device measurement; semiconductor device models; vapour phase epitaxial growth; CVD epitaxy; Si:As; UHF power transistor; UHF power transistor distortion; arsenic spike epitaxial growth; breakdown; collector-base capacitance bias dependence; intermodulation distortion; lightly-doped collector; mixed mode MDS/MAIDS simulations; nonuniform collector doping profile; ruggedness; trade-off linearity; Bipolar transistors; Circuit simulation; Doping profiles; Epitaxial growth; Intermodulation distortion; Laboratories; Linearity; Nonlinear distortion; Power transistors; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886188
