Title :
A comparison of modern power device concepts for high voltage applications: field stop-IGBT, compensation devices and SiC devices
Author :
Deboy, G. ; Hulsken, H. ; Mitlehner, H. ; Rupp, R.
Author_Institution :
Infineon AG, Munich, Germany
Abstract :
This article presents a comparison of recently introduced device concepts like the CoolMOSTM to new promising approaches such as the field-stop IGBT and the actual trends in SiC devices. All of these devices are capable of blocking voltages in the 1000 V range. They are optimized for switching frequencies up to 100 kHz and beyond and meet with different focus the requirements of applications like switch mode power supplies (SMPS), lighting or industry tasks
Keywords :
compensation; high-voltage techniques; insulated gate bipolar transistors; lighting; optimisation; power MOSFET; power bipolar transistors; silicon compounds; switched mode power supplies; wide band gap semiconductors; 100 kHz; 1000 V; CoolMOS device concept; SMPS; SiC; SiC devices; blocking voltages; compensation devices; device optimization; field stop-IGBT; high voltage applications; industry applications; lighting; power device concepts; switch mode power supplies; switching frequencies; Consumer electronics; Costs; Decision making; Electronics industry; Insulated gate bipolar transistors; Power semiconductor switches; Silicon carbide; Switched-mode power supply; Switching frequency; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886190
