Title :
InP opto-electronic integrated circuits
Author :
Daniels, R.R. ; Fuji, H.S. ; Griem, H.T. ; Harrang, J.P. ; Williams, T. ; Ray, S.
Author_Institution :
Boeing Aerosp. & Electron., Seattle, WA, USA
Abstract :
The requirements of InP opto-electronic ICs (OEIC) are discussed, and the progress being made in meeting these requirements is reviewed. Advantages and problems associated with the integration of OEIC elemental devices (e.g. laser diodes, photodetectors, and transistors) are discussed. The progress on two circuits, laser-transmitters and photodetector-receivers, is reviewed to demonstrate the integration of these elemental devices
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; receivers; semiconductor junction lasers; transmitters; InP; OEIC; integration of OEIC elemental devices; laser diodes; laser-transmitters; opto-electronic ICs; opto-electronic integrated circuits; photodetector-receivers; photodetectors; semiconductors; transistors; Bandwidth; Circuits; Diode lasers; Indium phosphide; Optical devices; Optical materials; Optical transmitters; Optoelectronic devices; Photodetectors; Substrates;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112528
