AlInAs/GaInAs HEMTs and HBTs for high speed circuits

Author

Delaney, Michael J.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

fYear

1990

fDate

1-3 May 1990

Firstpage

2548

Abstract

High electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) fabricated in the AlInAs-GaInAs epitaxial material system are described. The unique material and electronic properties of these ternary semiconductors provide extreme high frequency performance. Fundamental device designs for both the HEMT and HBT are presented with performance data. The implementation of these devices in small-scale circuits, ring oscillators, and dividers is demonstrated

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; field effect integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; oscillators; AlInAs-GaInAs epitaxial material system; HBTs; HEMTs; device designs; electronic properties; extreme high frequency performance; frequency dividers; heterojunction bipolar transistors; high speed circuits; performance data; ring oscillators; semiconductors; small-scale circuits; ternary semiconductors; Circuits; Electrons; Frequency; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs; Photonic band gap; Semiconductor materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., IEEE International Symposium on

Conference_Location

New Orleans, LA

Type

conf

DOI

10.1109/ISCAS.1990.112529

Filename

112529