Title :
Heterojunction bipolar transistors for high speed integrated circuits
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
The unique characteristics of heterojunction bipolar transistors (HBTs), their fabrication, state-of-the-art performance and applications are discussed. The future directions of HBT research and commercialization, including new material systems and advanced device structures, are addressed. HBTs are compared with other devices which operate in the GHz frequency range. These devices include bipolar junction transistors and field effect transistors. A discussion of HBT materials is presented
Keywords :
bipolar integrated circuits; heterojunction bipolar transistors; semiconductor technology; technological forecasting; GHz frequency range; HBT materials; HBTs; advanced device structures; applications; bipolar junction transistors; characteristics; commercialization; fabrication; field effect transistors; future directions of research; heterojunction bipolar transistors; high speed integrated circuits; material systems; state-of-the-art performance; Electrons; FETs; Frequency; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; High speed integrated circuits; MOSFETs; Molecular beam epitaxial growth; Voltage control;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112530
