Title :
A comprehensive bipolar avalanche multiplication compact model for circuit simulation
Author :
Kloosterman, W.J. ; Paasschens, J.C.J. ; Havens, R.J.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
In this paper, a new comprehensive bipolar transistor avalanche multiplication model is presented that takes into account the finite thickness of the epilayer, modulation of the electric field by the collector current (Kirk effect), current spreading in the epilayer and quasi-saturation. Two parameters are needed to model the collector voltage dependency at small current levels and one parameter is required to describe high current effects. The dependency of the collector-emitter breakdown voltage BVceo with collector current is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately
Keywords :
avalanche breakdown; bipolar transistors; circuit simulation; electric current; electric fields; semiconductor device breakdown; semiconductor device models; semiconductor epitaxial layers; Kirk effect; Mextram 504 bipolar compact transistor model; bipolar avalanche multiplication compact model; bipolar transistor avalanche multiplication model; circuit simulation; collector current; collector voltage dependency; collector-emitter breakdown voltage; current level; current spreading; electric field collector current modulation; finite epilayer thickness; high current effects; model parameters; quasi-saturation; Bipolar transistors; Breakdown voltage; Capacitance; Circuit simulation; Circuit synthesis; Current density; Impedance; Kirk field collapse effect; Laboratories; Semiconductor process modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886197
