A comprehensive bipolar avalanche multiplication compact model for circuit simulation

Author

Kloosterman, W.J. ; Paasschens, J.C.J. ; Havens, R.J.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

2000

fDate

2000

Firstpage

172

Lastpage

175

Abstract

In this paper, a new comprehensive bipolar transistor avalanche multiplication model is presented that takes into account the finite thickness of the epilayer, modulation of the electric field by the collector current (Kirk effect), current spreading in the epilayer and quasi-saturation. Two parameters are needed to model the collector voltage dependency at small current levels and one parameter is required to describe high current effects. The dependency of the collector-emitter breakdown voltage BV_ceo with collector current is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately

Keywords

avalanche breakdown; bipolar transistors; circuit simulation; electric current; electric fields; semiconductor device breakdown; semiconductor device models; semiconductor epitaxial layers; Kirk effect; Mextram 504 bipolar compact transistor model; bipolar avalanche multiplication compact model; bipolar transistor avalanche multiplication model; circuit simulation; collector current; collector voltage dependency; collector-emitter breakdown voltage; current level; current spreading; electric field collector current modulation; finite epilayer thickness; high current effects; model parameters; quasi-saturation; Bipolar transistors; Breakdown voltage; Capacitance; Circuit simulation; Circuit synthesis; Current density; Impedance; Kirk field collapse effect; Laboratories; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886197

Filename

886197