DocumentCode
2662614
Title
An S-parameter technique for substrate resistance characterization of RF bipolar transistors
Author
Harker, S.D. ; Havens, R.J. ; Paasschens, J.C.J. ; Szmyd, D. ; Tiemeijer, L.F. ; Weagel, E.F.
Author_Institution
Philips Semicond., Albuquerque, NM, USA
fYear
2000
fDate
2000
Firstpage
176
Lastpage
179
Abstract
An off-state S-parameter technique characterizes the NPN substrate resistance-capacitance network. The results are useful in designing RF test structures, modeling substrate effects for circuit simulation, and characterizing perimeter and area capacitance components from a single device
Keywords
S-parameters; capacitance; circuit simulation; electric resistance; microwave bipolar transistors; semiconductor device models; semiconductor device testing; NPN substrate resistance-capacitance network; RF bipolar transistors; RF test structure design; S-parameter technique; circuit simulation; device area capacitance component; device perimeter capacitance components; off-state S-parameter technique; substrate effects modeling; substrate resistance characterization; Bipolar transistors; Capacitance; Circuit simulation; Circuit testing; Coupling circuits; Electrical resistance measurement; Radio frequency; Scattering parameters; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-6384-1
Type
conf
DOI
10.1109/BIPOL.2000.886198
Filename
886198
Link To Document