Title :
An S-parameter technique for substrate resistance characterization of RF bipolar transistors
Author :
Harker, S.D. ; Havens, R.J. ; Paasschens, J.C.J. ; Szmyd, D. ; Tiemeijer, L.F. ; Weagel, E.F.
Author_Institution :
Philips Semicond., Albuquerque, NM, USA
Abstract :
An off-state S-parameter technique characterizes the NPN substrate resistance-capacitance network. The results are useful in designing RF test structures, modeling substrate effects for circuit simulation, and characterizing perimeter and area capacitance components from a single device
Keywords :
S-parameters; capacitance; circuit simulation; electric resistance; microwave bipolar transistors; semiconductor device models; semiconductor device testing; NPN substrate resistance-capacitance network; RF bipolar transistors; RF test structure design; S-parameter technique; circuit simulation; device area capacitance component; device perimeter capacitance components; off-state S-parameter technique; substrate effects modeling; substrate resistance characterization; Bipolar transistors; Capacitance; Circuit simulation; Circuit testing; Coupling circuits; Electrical resistance measurement; Radio frequency; Scattering parameters; Silicon; Substrates;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886198
