Title :
Extraction of the base-collector capacitance splitting along the base resistance using HF measurements [bipolar transistors]
Author :
Berger, D. ; Gambetta, N. ; Céli, D. ; Dufaza, C.
Author_Institution :
ISIM, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
This paper presents an efficient method to evaluate with accuracy the partitioning of the base-collector depletion capacitance through the base resistance by the way of the SPICE Gummel-Poon (SGP) model parameter XCJC. This parameter is directly extracted, without any optimization, from the real part of the high-frequency small-signal admittance Y12 in common emitter configuration
Keywords :
SPICE; bipolar transistors; capacitance; electric admittance; electric resistance; semiconductor device measurement; semiconductor device models; HF measurements; SPICE Gummel-Poon model parameter; base resistance; base-collector capacitance splitting; base-collector depletion capacitance partitioning; bipolar transistors; common emitter configuration; direct parameter extraction; high-frequency small-signal admittance; optimization; Admittance measurement; Capacitance measurement; Electrical resistance measurement; Equations; Equivalent circuits; Frequency estimation; Hafnium; Parameter extraction; Performance evaluation; SPICE;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886199
