Title :
Enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors
Author :
Magnée, P. H C ; van Rijs, F. ; Dekker, R. ; Hartskeer, D. M H ; Kemmeren, A.L.A.M. ; Koster, R. ; Huizing, H.G.A.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
For the first time, we show an enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors. By grounding the emitter with a substrate contact to a low-ohmic substrate, the emitter bondwire is effectively short-circuited. At maximum output power, 0.5 W with a power added efficiency >60%, an increase in power gain of 2 dB, up to 14.5 dB, is observed. For 0.2 W output power, an increase of 5 dB, up to 19 dB, is observed
Keywords :
UHF bipolar transistors; earthing; inductance; lead bonding; microwave bipolar transistors; semiconductor device measurement; semiconductor device metallisation; 0.2 W; 0.5 W; 14.5 dB; 19 dB; 60 percent; RF power gain; emitter bondwire effective short-circuit; emitter bondwire inductance; emitter bondwire inductance elimination; emitter grounding; emitter plug grounded mounted bipolar transistors; enhanced RF power gain; low-ohmic substrate; maximum output power; output power; power added efficiency; power gain; substrate contact; Bipolar transistors; Bonding; Heat transfer; Inductance; Plugs; Power generation; Power transistors; Radio frequency; Substrates; Thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886204
