Title :
A novel measurement technique for direct experimental validation of bandgap narrowing models for SiGe HBT´s
Author :
Hamel, J.S. ; Tang, Y.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
A widely used bandgap narrowing model is validated by means of a novel electrical measurement technique which isolates only those physical phenomena contributing to bandgap narrowing in fully processed SiGe HBTs
Keywords :
Ge-Si alloys; energy gap; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor materials; SiGe; SiGe HBT; bandgap narrowing; bandgap narrowing model; bandgap narrowing models; direct experimental validation; electrical measurement technique; fully processed SiGe HBTs; measurement technique; physical phenomena isolation; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Measurement techniques; Numerical simulation; Photonic band gap; Predictive models; Silicon germanium; Temperature distribution;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886205
