Title :
Transistor noise in SiGe HBT RF technology
Author :
Niu, Guofu ; Cressler, John D. ; Jin, Zhenrong ; Zhang, Shining ; Juraver, Jean B. ; Borgarino, Mattia ; Plana, Robert ; Llopis, Olivier ; Webster, C. ; Joseph, Alvin J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
Abstract :
This work presents experimental and modeling results of device noise in SiGe HBT RF technology. Two major concerns for RF applications are examined: (1) the RF noise that determines the low-noise amplifier (LNA) performance; and (2) the residual phase noise that results from the up-conversion of low-frequency noise and determines the phase noise of the local oscillator (LO) and mixer circuits
Keywords :
Ge-Si alloys; MMIC amplifiers; MMIC mixers; MMIC oscillators; UHF amplifiers; UHF bipolar transistors; UHF mixers; UHF oscillators; bipolar MMIC; heterojunction bipolar transistors; microwave bipolar transistors; phase noise; semiconductor device measurement; semiconductor device models; semiconductor device noise; semiconductor materials; LNA performance; RF applications; RF noise; SiGe; SiGe HBT RF technology; device noise; local oscillator circuit; low-frequency noise up-conversion; low-noise amplifier performance; mixer circuit; modeling; phase noise; residual phase noise; transistor noise; Admittance; Circuit noise; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microelectronics; Noise figure; Phase noise; Radio frequency; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886206
