ESD robustness of a BiCMOS SiGe technology

Author

Voldman, S. ; Juliano, P. ; Schmidt, N. ; Botula, A. ; Johnson, R. ; Lanzerotti, L. ; Feilchenfeld, N. ; Joseph, A. ; Malinowski, J. ; Eld, E. ; Gross, V. ; Brennan, C. ; Dunn, J. ; Harame, D. ; Herman, D. ; Meyerson, B.

Author_Institution

Microelectron. Div., IBM Commun. Res. & Dev. Center, Essex Junction, VT, USA

fYear

2000

fDate

2000

Firstpage

214

Lastpage

217

Abstract

High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. BiCMOS active and passive elements are discussed

Keywords

BiCMOS integrated circuits; Ge-Si alloys; capacitors; electron device testing; electrostatic discharge; heterojunction bipolar transistors; inductors; integrated circuit reliability; integrated circuit testing; resistors; semiconductor device reliability; semiconductor device testing; semiconductor epitaxial layers; semiconductor materials; BiCMOS SiGe technology; BiCMOS active elements; BiCMOS passive elements; ESD robustness; SiGe; electrostatic discharge robustness; epitaxial-base pseudomorphic SiGe heterojunction npn bipolar transistors; epitaxial-base pseudomorphic silicon germanium npn HBTs; high current characterization; pseudomorphic silicon germanium heterojunction npn bipolar transistors; BiCMOS integrated circuits; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Robustness; Silicon germanium; Space vector pulse width modulation; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886208

Filename

886208