Title :
High-Throughput Low-Energy Content-Addressable Memory Based on Self-Timed Overlapped Search Mechanism
Author :
Onizawa, Naoya ; Matsunaga, Shoun ; Gaudet, Vincent C. ; Hanyu, Takahiro
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Abstract :
This paper introduces a self-timed overlapped search mechanism for high-throughput content-addressable memories (CAMs) with low search energy. Most mismatches can be found by searching the first few bits in a search word. Consequently, if a word circuit is divided into two sections that are sequentially searched, most match lines in the second section are unused. As searching the first section is faster than searching an entire word, we could potentially increase throughput by initiating a second-stage search on the unused match lines as soon as a first-stage search is complete. The overlapped search mechanism is realized using a self-timed word circuit that is independently controlled by a locally generated control signal, reducing the power dissipation of global clocking. A 256 x 144-bit CAM is designed under in 90 nm CMOS that operates with 5.57x faster throughput than a synchronous CAM, with 38% energy saving and 8% area overhead.
Keywords :
CMOS memory circuits; content-addressable storage; search problems; CMOS technology; energy saving; first-stage search mechanism; global clocking; high-throughput CAM; high-throughput low-energy content-addressable memory; locally generated control signal; match lines; power dissipation reduction; second-stage search mechanism; self-timed overlapped search mechanism; self-timed word circuit; size 90 nm; synchronous CAM; Computer aided manufacturing; Delay; Discharges (electric); MOSFETs; Throughput; NAND-type CAM; associative memory; asynchronous circuits; hierarchical match-line structure;
Conference_Titel :
Asynchronous Circuits and Systems (ASYNC), 2012 18th IEEE International Symposium on
Conference_Location :
Lyngby
Print_ISBN :
978-1-4673-1360-5
DOI :
10.1109/ASYNC.2012.25