DocumentCode
2662830
Title
GaSb-based Micro-Mechanical External-Cavity Laser Emitting around 2.3μm
Author
Geerlings, E. ; Rattunde, M. ; Schmitz, J. ; Kaufel, G. ; Wagner, J. ; Kallweit, D. ; Zappe, H.
Author_Institution
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg
fYear
2006
fDate
21-24 Aug. 2006
Firstpage
15
Lastpage
16
Abstract
We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow-configuration. An electrostatically actuated Si-grating, optimized to achieve a wide tuning range in the 2.3mum wavelength range, is used as a tuning element
Keywords
III-V semiconductors; diffraction gratings; gallium compounds; laser cavity resonators; micro-optomechanical devices; micromachining; quantum well lasers; silicon; 2.3 micron; GaSb; GaSb-based micromechanical external-cavity laser; Littrow-configuration; Si; electrostatically actuated Si-grating; infrared diode laser; micromachining; quantum-well diode laser; Blood; Diode lasers; Electrostatic actuators; Fiber lasers; Gas lasers; Gratings; Laser tuning; Quantum well lasers; Spectroscopy; Sugar;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical MEMS and Their Applications Conference, 2006. IEEE/LEOS International Conference on
Conference_Location
Big Sky, MT
Print_ISBN
0-7803-9562-X
Type
conf
DOI
10.1109/OMEMS.2006.1708242
Filename
1708242
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