Seeded lateral epitaxial SOI using (01¯5) substrate

Summary form only given. In addition to the traditional advantages of SOI devices, improved subthreshold slope, elimination of kink effect and enhancement in conductance have been reported for thin-film SOI devices. To achieve these characteristics, defect-free and orientation-controlled SOI is needed. In laser recrystallization using seeded lateral epitaxy, this has been achieved by (001)[01¯0] scanning. However, the texture of the film changes continuously (textural drift) toward (011) during propagation from seeds. Here, the most suitable direction for seeding to minimize the deviation of device characteristics caused by the textural drift is proposed. It is found that seeding in (01¯5)[05¯1¯] is effective in reducing the orientation deviation of the laser recrystallized SOI film by about a half and yielding uniform device characteristics