Title :
Tailored Stress in InP/GaInAs Layers for InP/Air-Gap DBR-Filters with Photonic Crystals
Author :
Kusserow, Thomas ; Dharmarasu, N. ; Hillmer, Hartmut ; Nakamura, T. ; Hayakawa, Takeshi ; Vengatesan, B.
Author_Institution :
Inst. of Nanostructure Technol. & Analytics, Kassel Univ.
Abstract :
A detailed investigation on the control of residual stresses, especially gradient stress, in InP/air-gap structures is presented. Free standing cantilevers with stress compensation by Ga0.03In0.97P layers of various thicknesses and by a variation of V/III flux ratio in growth direction were fabricated, leading to controlled stress properties. White light interferometry was used for evaluation of the gradient stress values
Keywords :
III-V semiconductors; compensation; distributed Bragg reflectors; gallium arsenide; gallium compounds; indium compounds; internal stresses; light interferometry; micro-optomechanical devices; optical fabrication; optical films; optical filters; optical testing; photonic crystals; semiconductor epitaxial layers; Ga0.03In0.97P; InP-GaInAs; InP/air-gap DBR-filters; epitaxial layers; flux ratio; free standing cantilevers; gradient stress; optical MEMS; photonic crystals; residual stresses; stress compensation; white light interferometry; Air gaps; Epitaxial layers; Indium phosphide; Lattices; Optical filters; Optical interferometry; Optical sensors; Photonic crystals; Residual stresses; Stress control;
Conference_Titel :
Optical MEMS and Their Applications Conference, 2006. IEEE/LEOS International Conference on
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-9562-X
DOI :
10.1109/OMEMS.2006.1708278
